Used as a precursor in the synthesis of gallium arsenide (GaAs), a semiconductor material widely applied in high-speed electronics, infrared light-emitting diodes (LEDs), laser diodes, and photovoltaic cells. Also employed in doping silicon for n-type semiconductors and in the production of compound semiconductors for microwave frequency devices and optoelectronic components. Its role in metalorganic vapor phase epitaxy (MOVPE) enables precise layering of arsenic-containing films in advanced electronic and photonic devices.