Bis(trifluoro-2,4-pentanedionato)copper(II)
≥98%
science Other reagents with same CAS 23677-93-2
blur_circular Chemical Specifications
description Product Description
Used as a precursor in chemical vapor deposition (CVD) processes to produce copper-containing thin films for semiconductor and microelectronic devices. Its volatility and thermal stability make it suitable for depositing high-purity copper layers at relatively low temperatures. Also employed in research for creating nanostructured copper materials and catalysts due to its well-defined decomposition behavior.
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