Used in advanced semiconductor manufacturing processes as a high-purity etching gas. Effective in plasma etching of silicon and silicon dioxide layers due to its high reactivity and selectivity. Commonly applied in the fabrication of microelectronic devices, including memory chips and logic processors. Its low particle contamination and consistent performance make it suitable for high-precision lithography and thin-film removal in vacuum environments. Also utilized in research settings for developing next-generation nanoscale electronics.