Gallium(III) chloride

99.99% metals basis

Reagent Code: #127965
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CAS Number 13450-90-3

science Other reagents with same CAS 13450-90-3

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 176.08 g/mol
Formula GaCl₃
badge Registry Numbers
EC Number 236-610-0
MDL Number MFCD00011018
inventory_2 Storage & Handling
Storage 2-8℃, argon filling

description Product Description

Used as a catalyst in organic synthesis, particularly in Friedel-Crafts reactions and other Lewis acid-mediated transformations. It facilitates the formation of carbon-carbon bonds in alkylation and acylation processes. Also employed in the semiconductor industry for the production of gallium-containing materials like gallium arsenide through metalorganic chemical vapor deposition (MOCVD). Its high reactivity makes it suitable for generating other gallium-based compounds used in electronics and optoelectronics.

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Test Parameter Specification
Purity (Based on Trace Metal Analysis)(%) 99.99-100
Trace Metal Analysis (ppm) 0-200
Appearance White Powder or Crystals
ICP Major Analysis Confirmed

shopping_cart Available Sizes & Pricing

Size Availability Unit Price Quantity
inventory 5g
10-20 days ฿1,710.00
inventory 25g
10-20 days ฿4,840.00
inventory 100g
10-20 days ฿10,500.00

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Gallium(III) chloride
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Used as a catalyst in organic synthesis, particularly in Friedel-Crafts reactions and other Lewis acid-mediated transformations. It facilitates the formation of carbon-carbon bonds in alkylation and acylation processes. Also employed in the semiconductor industry for the production of gallium-containing materials like gallium arsenide through metalorganic chemical vapor deposition (MOCVD). Its high reactivity makes it suitable for generating other gallium-based compounds used in electronics and optoelectron
Used as a catalyst in organic synthesis, particularly in Friedel-Crafts reactions and other Lewis acid-mediated transformations. It facilitates the formation of carbon-carbon bonds in alkylation and acylation processes. Also employed in the semiconductor industry for the production of gallium-containing materials like gallium arsenide through metalorganic chemical vapor deposition (MOCVD). Its high reactivity makes it suitable for generating other gallium-based compounds used in electronics and optoelectronics.
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