Tetramethylgermane is primarily used in the semiconductor industry as a precursor for the deposition of germanium-containing thin films. It is employed in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create high-quality germanium layers or germanium-doped materials, which are essential in the fabrication of advanced electronic devices. Its application is particularly significant in the development of optoelectronic components, such as infrared detectors and solar cells, where germanium's properties enhance performance. Additionally, it serves as a reagent in organic synthesis for introducing germanium into various compounds, enabling the study of organogermanium chemistry and its potential applications in material science.