Used primarily as a photoacid generator (PAG) in advanced photoresist formulations for semiconductor manufacturing. Upon exposure to deep ultraviolet (DUV) or extreme ultraviolet (EUV) light, it releases strong sulfonic acids that catalyze chemical transformations in the resist, enabling precise pattern development during lithography. Its thermal stability and efficient acid generation make it suitable for high-resolution patterning in microelectronics fabrication. Also employed in chemically amplified resist systems where controlled acid release is critical for achieving fine feature sizes.