[3-oxo-6'-(2,3,4,5,6-pentafluorophenyl)sulfonyloxyspiro[2-benzofuran-1,9'-xanthene]-3'-yl] 2,3,4,5,6-pentafluorobenzenesulfonate

97%

Reagent Code: #221204
label
Alias Related 728912-45-6

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 792.53 g/mol
Formula C₃₂H₁₀O₉F₁₀S₂
inventory_2 Storage & Handling
Storage -20 °C, Sealed, Dry

description Product Description

Used as a highly efficient photoinitiator in advanced photoresist systems for semiconductor manufacturing. Enables high-resolution patterning in deep ultraviolet (DUV) lithography due to its strong absorption at 193 nm and excellent thermal stability. Facilitates the production of fine circuit patterns in microelectronics by generating reactive species upon light exposure, initiating crosslinking or decomposition of the resist matrix. Also employed in specialty coatings and advanced 3D printing applications requiring precise feature control and low outgassing.

Available Sizes & Pricing

Size Availability Unit Price Quantity
1mg
10-20 days ฿3,600.00
5mg
10-20 days ฿17,820.00
25mg
10-20 days ฿56,400.00
100mg
10-20 days ฿144,000.00
[3-oxo-6'-(2,3,4,5,6-pentafluorophenyl)sulfonyloxyspiro[2-benzofuran-1,9'-xanthene]-3'-yl] 2,3,4,5,6-pentafluorobenzenesulfonate
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Used as a highly efficient photoinitiator in advanced photoresist systems for semiconductor manufacturing. Enables high-resolution patterning in deep ultraviolet (DUV) lithography due to its strong absorption at 193 nm and excellent thermal stability. Facilitates the production of fine circuit patterns in microelectronics by generating reactive species upon light exposure, initiating crosslinking or decomposition of the resist matrix. Also employed in specialty coatings and advanced 3D printing applicati

Used as a highly efficient photoinitiator in advanced photoresist systems for semiconductor manufacturing. Enables high-resolution patterning in deep ultraviolet (DUV) lithography due to its strong absorption at 193 nm and excellent thermal stability. Facilitates the production of fine circuit patterns in microelectronics by generating reactive species upon light exposure, initiating crosslinking or decomposition of the resist matrix. Also employed in specialty coatings and advanced 3D printing applications requiring precise feature control and low outgassing.

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