1,2-Dimethoxy-1,1,2,2-tetramethyldisilane

95%

Reagent Code: #129341
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CAS Number 10124-62-6

science Other reagents with same CAS 10124-62-6

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 178.38 g/mol
Formula C₆H₁₈O₂Si₂
thermostat Physical Properties
Melting Point 138-151 °C
inventory_2 Storage & Handling
Density 0.8587 g/cm3 at 25 °C
Storage Room temperature, seal, dry

description Product Description

Used as a silylating agent in organic synthesis, particularly for the protection of hydroxyl and carboxyl groups during multi-step reactions. Its steric bulk and electron-donating methoxy groups enhance selectivity and stability under mild reaction conditions. Commonly applied in the preparation of sensitive intermediates in pharmaceutical and agrochemical manufacturing. Also serves as a precursor in the deposition of silicon-based thin films in semiconductor processing due to its volatility and thermal stability.

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Size Availability Unit Price Quantity
inventory 250mg
10-20 days ฿3,470.00
inventory 1g
10-20 days ฿9,550.00
inventory 5g
10-20 days ฿28,550.00

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1,2-Dimethoxy-1,1,2,2-tetramethyldisilane
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Used as a silylating agent in organic synthesis, particularly for the protection of hydroxyl and carboxyl groups during multi-step reactions. Its steric bulk and electron-donating methoxy groups enhance selectivity and stability under mild reaction conditions. Commonly applied in the preparation of sensitive intermediates in pharmaceutical and agrochemical manufacturing. Also serves as a precursor in the deposition of silicon-based thin films in semiconductor processing due to its volatility and thermal

Used as a silylating agent in organic synthesis, particularly for the protection of hydroxyl and carboxyl groups during multi-step reactions. Its steric bulk and electron-donating methoxy groups enhance selectivity and stability under mild reaction conditions. Commonly applied in the preparation of sensitive intermediates in pharmaceutical and agrochemical manufacturing. Also serves as a precursor in the deposition of silicon-based thin films in semiconductor processing due to its volatility and thermal stability.

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