Used as a photoacid generator (PAG) in advanced photoresist formulations for semiconductor lithography. Upon exposure to deep ultraviolet (DUV) or extreme ultraviolet (EUV) light, it releases strong acid that catalyzes chemical transformations in the resist, enabling precise pattern development during microfabrication. Its high thermal stability and efficient acid generation make it suitable for high-resolution patterning in modern chip manufacturing. Also employed in some cationic polymerization processes where controlled initiation is required through light activation.