Poly [(9,9‐bis(3'‐(N,NdiMethyl)‐NethylaMMoiniuM‐propyl)‐2,7‐fluorene)‐alt‐2,7‐(9,9–dioctylfluorene)]dibroMidePFN‐Br
98%
Reagent
Code: #226404
CAS Number
889672-99-5
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Storage
Room temperature
description Product Description
Used primarily in organic electronic devices, this polymer enhances electron injection and transport in polymer light-emitting diodes (PLEDs), leading to improved device efficiency and lower operating voltages. It functions effectively as a cathode interfacial layer, promoting ohmic contact between the cathode and the emissive layer. Its quaternary ammonium groups provide ionic conductivity and favorable energy level alignment, which stabilizes electron injection. Additionally, it is employed in organic photovoltaics (OPVs) to optimize the cathode interface, increasing power conversion efficiency. The material is solution-processable, enabling low-cost, large-area fabrication of flexible electronics through techniques like spin-coating or inkjet printing. Its good film-forming properties and ambient stability make it suitable for use in air-stable n-type organic semiconducting devices.
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Poly [(9,9‐bis(3'‐(N,NdiMethyl)‐NethylaMMoiniuM‐propyl)‐2,7‐fluorene)‐alt‐2,7‐(9,9–dioctylfluorene)]dibroMidePFN‐Br
Used primarily in organic electronic devices, this polymer enhances electron injection and transport in polymer light-emitting diodes (PLEDs), leading to improved device efficiency and lower operating voltages. It functions effectively as a cathode interfacial layer, promoting ohmic contact between the cathode and the emissive layer. Its quaternary ammonium groups provide ionic conductivity and favorable energy level alignment, which stabilizes electron injection. Additionally, it is employed in organic photovoltaics (OPVs) to optimize the cathode interface, increasing power conversion efficiency. The material is solution-processable, enabling low-cost, large-area fabrication of flexible electronics through techniques like spin-coating or inkjet printing. Its good film-forming properties and ambient stability make it suitable for use in air-stable n-type organic semiconducting devices.
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