Barium bis(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate)
99.99% trace metals
science Other reagents with same CAS 36885-31-1
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description Product Description
Used primarily as a precursor in chemical vapor deposition (CVD) processes to produce barium-containing thin films. These films are essential in the fabrication of high-temperature superconductors and ferroelectric materials used in advanced electronic devices. The compound’s high volatility and thermal stability make it suitable for depositing barium oxide or barium titanate layers with precise stoichiometry. It is also employed in the synthesis of specialty materials for optical coatings and dielectric components in capacitors. Due to its fluorinated ligands, it offers improved solubility and handling in non-aqueous systems, beneficial for solution-based processing techniques.
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