Barium bis(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate)

99.99% trace metals

Reagent Code: #149562
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CAS Number 36885-31-1

science Other reagents with same CAS 36885-31-1

blur_circular Chemical Specifications

scatter_plot Molecular Information
Weight 727.68 g/mol
Formula C₂₀H₂₀BaF₁₄O₄
thermostat Physical Properties
Melting Point 92-96 °C (lit.)
Boiling Point 280-300°C
inventory_2 Storage & Handling
Storage Room temperature

description Product Description

Used primarily as a precursor in chemical vapor deposition (CVD) processes to produce barium-containing thin films. These films are essential in the fabrication of high-temperature superconductors and ferroelectric materials used in advanced electronic devices. The compound’s high volatility and thermal stability make it suitable for depositing barium oxide or barium titanate layers with precise stoichiometry. It is also employed in the synthesis of specialty materials for optical coatings and dielectric components in capacitors. Due to its fluorinated ligands, it offers improved solubility and handling in non-aqueous systems, beneficial for solution-based processing techniques.

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Size Availability Unit Price Quantity
inventory 1g
10-20 days ฿7,130.00
inventory 5g
10-20 days ฿28,500.00

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Barium bis(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate)
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Used primarily as a precursor in chemical vapor deposition (CVD) processes to produce barium-containing thin films. These films are essential in the fabrication of high-temperature superconductors and ferroelectric materials used in advanced electronic devices. The compound’s high volatility and thermal stability make it suitable for depositing barium oxide or barium titanate layers with precise stoichiometry. It is also employed in the synthesis of specialty materials for optical coatings and dielectric

Used primarily as a precursor in chemical vapor deposition (CVD) processes to produce barium-containing thin films. These films are essential in the fabrication of high-temperature superconductors and ferroelectric materials used in advanced electronic devices. The compound’s high volatility and thermal stability make it suitable for depositing barium oxide or barium titanate layers with precise stoichiometry. It is also employed in the synthesis of specialty materials for optical coatings and dielectric components in capacitors. Due to its fluorinated ligands, it offers improved solubility and handling in non-aqueous systems, beneficial for solution-based processing techniques.

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