Used primarily as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for fabricating tantalum-containing thin films. These films are critical in semiconductor manufacturing, especially as diffusion barriers or conductive layers in advanced integrated circuits. Its high reactivity and volatility allow for efficient deposition at relatively low temperatures, making it suitable for high-k dielectrics and gate electrode applications. Also explored in the synthesis of tantalum nitride and tantalum carbonitride films, which offer good thermal stability and electrical conductivity for microelectronic devices.