Ammonium Hexafluoroniobate

98%

Reagent Code: #137460
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CAS Number 12062-13-4

science Other reagents with same CAS 12062-13-4

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Weight 224.94 g/mol
Formula F₆H₄NNb
inventory_2 Storage & Handling
Storage Room temperature

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Used primarily in the electronics industry for the production of niobium-based capacitors due to its ability to provide high-purity niobium compounds. It serves as a precursor in the synthesis of niobium oxide and niobium metal powders, which are essential for manufacturing compact, high-performance capacitors used in mobile devices and computers. Also employed in specialized coatings and thin films where corrosion resistance and dielectric properties are critical. In research, it acts as a fluorinating and doping agent in the development of advanced ceramic materials and superconductors. Its role in chemical vapor deposition (CVD) processes enables the formation of niobium-containing layers in semiconductor devices.

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inventory 1g
10-20 days ฿102,710.00

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Ammonium Hexafluoroniobate
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Used primarily in the electronics industry for the production of niobium-based capacitors due to its ability to provide high-purity niobium compounds. It serves as a precursor in the synthesis of niobium oxide and niobium metal powders, which are essential for manufacturing compact, high-performance capacitors used in mobile devices and computers. Also employed in specialized coatings and thin films where corrosion resistance and dielectric properties are critical. In research, it acts as a fluorinating

Used primarily in the electronics industry for the production of niobium-based capacitors due to its ability to provide high-purity niobium compounds. It serves as a precursor in the synthesis of niobium oxide and niobium metal powders, which are essential for manufacturing compact, high-performance capacitors used in mobile devices and computers. Also employed in specialized coatings and thin films where corrosion resistance and dielectric properties are critical. In research, it acts as a fluorinating and doping agent in the development of advanced ceramic materials and superconductors. Its role in chemical vapor deposition (CVD) processes enables the formation of niobium-containing layers in semiconductor devices.

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