Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing copper thin films in semiconductor manufacturing. Its volatility and thermal stability allow for precise, low-temperature deposition, making it suitable for advanced microelectronic devices where copper acts as a conductive layer. The complex helps achieve high-purity, uniform coatings essential in integrated circuits and printed circuit boards. It is favored in applications requiring minimal carbon contamination due to its clean decomposition profile.