This chemical is primarily used in the semiconductor industry as a precursor for the deposition of tantalum-containing thin films. It is employed in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes to create high-quality, uniform films essential for advanced electronic devices. These films are critical in the fabrication of capacitors, gate dielectrics, and diffusion barriers in integrated circuits. Its thermal stability and reactivity make it suitable for precise control over film composition and thickness, ensuring optimal performance in microelectronics. Additionally, it is utilized in research and development for exploring new materials and applications in nanotechnology.